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HCW60R150 - 600V N-Channel Super Junction MOSFET

Key Features

  • Very Low FOM (RDS(on) X Qg).
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • 100% Avalanche Tested.
  • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 21.4 0.15 50 Unit V A Ω nC.

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Datasheet Details

Part number HCW60R150
Manufacturer SemiHow
File Size 250.54 KB
Description 600V N-Channel Super Junction MOSFET
Datasheet download datasheet HCW60R150 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HCW60R150 Dec 2019 HCW60R150 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 21.4 0.