HCW65R320 - 650V N-Channel Super Junction MOSFET

Datasheet Summary

Features

Very Low FOM (RDS(on) X Qg).
Extremely low switching loss.
Excellent stability and uniformity.
100% Avalanche Tested.
Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 12.3 0.32 27 Unit V A Ω nC.

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Datasheet Details

Part number	HCW65R320
Manufacturer	SemiHow
File Size	263.69 KB
Description	650V N-Channel Super Junction MOSFET
Datasheet	HCW65R320 Datasheet
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HCW65R320 Nov 2020 HCW65R320 650V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 12.3 0.

Published: Nov 5, 2024 |