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HCW65R320 - 650V N-Channel Super Junction MOSFET

Key Features

  • Very Low FOM (RDS(on) X Qg).
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • 100% Avalanche Tested.
  • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 12.3 0.32 27 Unit V A Ω nC.

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Datasheet Details

Part number HCW65R320
Manufacturer SemiHow
File Size 263.69 KB
Description 650V N-Channel Super Junction MOSFET
Datasheet download datasheet HCW65R320 Datasheet

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HCW65R320 Nov 2020 HCW65R320 650V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 12.3 0.