HFB1N70 - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 10.3 Ω (Typ. ) @VGS=10V 100% Avalanche Tested TO-92 1 23 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Cu.

HFB1N70 n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFB1N70
Manufacturer	SemiHow
File Size	296.50 KB
Description	N-Channel MOSFET
Datasheet	HFB1N70 Datasheet

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Full PDF Text Transcription (Reference)

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HFB1N70 Jan 2007 HFB1N70 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 10.3 Ω ID = 0.3 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 10.3 Ω (Typ.) @VGS=10V 100% Avalanche Tested TO-92 1 23 1.Gate 2. Drain 3.