HFB1N70
HFB1N70 is N-Channel MOSFET manufactured by SemiHow.
Jan 2007
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) typ = 10.3 Ω ID = 0.3 A
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 10.3 Ω (Typ.) @VGS=10V 100% Avalanche Tested
TO-92
1 23
1.Gate 2. Drain 3. Source...
