HFC1N70 - N-Channel MOSFET

Product Overview

SemiHow

Part number	HFC1N70
Manufacturer	SemiHow
File Size	716.86 KB
Description	N-Channel MOSFET
Datasheet	HFC1N70 Datasheet
Additional preview pages of the HFC1N70 datasheet.

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 4.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 14.0 Ω (Typ. ) @VGS=10V  100% Avalanche Tested TO-126 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage.

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Published: Jun 7, 2015 |