HFD630 - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD630 1 2 3 HFU630 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-S.

HFD630 n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFD630
Manufacturer	SemiHow
File Size	162.20 KB
Description	N-Channel MOSFET
Datasheet	HFD630 Datasheet

Full PDF Text Transcription for HFD630 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFD630. For precise diagrams, and layout, please refer to the original PDF.

HFD630_HFU630 Dec 2012 HFD630 / HFU630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 7.2 A FEATURES Originative New Design Superior Avalanche Rugged T...

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7.2 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD630 1 2 3 HFU630 1.Gate 2. Drain 3.

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