HFD8N70U - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 1.3 ȍ7S#9GS=10V 100% Avalanche Tested June 2015 BVDSS = 700 V RDS(on) typ = 1.3 ȍ ID = 6.0 A D-PAK I-PAK 2 1 3 HFD8N70U 1 2 3 HFU8N70U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol.

HFD8N70U n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFD8N70U
Manufacturer	SemiHow
File Size	259.35 KB
Description	N-Channel MOSFET
Datasheet	HFD8N70U Datasheet

Full PDF Text Transcription for HFD8N70U (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFD8N70U. For precise diagrams, and layout, please refer to the original PDF.

HFD8N70U_HFU8N70U HFD8N70U / HFU8N70U 700V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very...

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rior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.3 ȍ 7S #9GS=10V 100% Avalanche Tested June 2015 BVDSS = 700 V RDS(on) typ = 1.3 ȍ ID = 6.0 A D-PAK I-PAK 2 1 3 HFD8N70U 1 2 3 HFU8N70U 1.Gate 2. Drain 3.

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