SemiHow HFG1N80
N-Channel MOSFET
| Part No. | HFG1N80 |
|---|---|
| Datasheet | HFG1N80 Download |
| Manufacturer |  SemiHow |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Originative New Design● Superior Avalanche Rugged Technology
● Robust Gate Oxide Technology
● Very Low Intrinsic Capacitances
● Excellent Switching Characteristics
● Unrivalled Gate Charge : 7.5 nC (Typ.)
● Extended Safe Operating Area
● Lower RDS(ON) : 13 Ω (Typ.) @VGS=10V Preliminary Aug 2008 BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.0 A TO-92L 1.Gate 2. Drain 3. Source D G S
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 800 1.0 0.63 4.0 ±30 90 1.0 4.5 4.0 PD TJ, TSTG TL Power Dissipation (TA = 25℃) * Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for solde...