Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 13 Ω (Typ. ) @VGS=10V
Preliminary
Aug 2008
BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.0 A
TO-92L
1.Gate 2. Drain 3. Source D
G S
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv.
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HFG1N80_Preliminary HFG1N80 800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intri...
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nche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 13 Ω (Typ.) @VGS=10V Preliminary Aug 2008 BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.0 A TO-92L 1.Gate 2. Drain 3.
HFG1N80 Datasheet
