Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Built-in ESD Diode
Key Parameters
Parameter BVDSS ID
RDS(on), Typ Qg, Typ
Value 900 10 1.0 72
HFH10N90Z TO-3P
HFA10N90Z TO-247
Symbol
Unit V A ȍ nC
S
D G
S D G
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
TO-3P
TO-247
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Volt.
Full PDF Text Transcription for HFH10N90Z (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HFH10N90Z. For precise diagrams, and layout, please refer to the original PDF.
HFH10N90Z_HFA10N90Z Oct 2016 HFH10N90Z / HFA10N90Z 900V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrins...
View more extracted text
he Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Built-in ESD Diode Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 900 10 1.
HFH10N90Z Datasheet
