HFH10N90Z - N-Channel MOSFET

Product Overview

SemiHow

Part number	HFH10N90Z
Manufacturer	SemiHow
File Size	245.64 KB
Description	N-Channel MOSFET
Datasheet	HFH10N90Z Datasheet
Additional preview pages of the HFH10N90Z datasheet.

Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Built-in ESD Diode Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 900 10 1.0 72 HFH10N90Z TO-3P HFA10N90Z TO-247 Symbol Unit V A ȍ nC S D G S D G Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter TO-3P TO-247 VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Volt.

📁 Similar Datasheet

HFH12N60 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFH20N50 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFH7N60 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFH9N90 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)

Other Datasheets by SemiHow

Published: Apr 14, 2017 |