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HFH13N80 - N-Channel MOSFET

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 68 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.77 Ω (Typ. ) @VGS=10V  100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

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Datasheet Details

Part number HFH13N80
Manufacturer SemiHow
File Size 782.24 KB
Description N-Channel MOSFET
Datasheet download datasheet HFH13N80 Datasheet

Full PDF Text Transcription for HFH13N80 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFH13N80. For precise diagrams, and layout, please refer to the original PDF.

HFH13N80 Dec 2005 HFH13N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 0.77 Ω ID = 12.6 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology ...

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URES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 68 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.77 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3.

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