SemiHow HFH18N50S
N-Channel MOSFET
| Part No. | HFH18N50S |
|---|---|
| Datasheet | HFH18N50S Download |
| Manufacturer |  SemiHow |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 52 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.220 ȍ (Typ.) @VGS=10V 100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 500 19 11.4 76 ρ30 945 19 23 4.5 PD TJ, TSTG TL Power Dissipation (TC = 25) - Derate above 25 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 239 1.92 -55 to +150 300 Units...
