HFH19N60 - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 95 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current D.

HFH19N60 n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFH19N60
Manufacturer	SemiHow
File Size	208.90 KB
Description	N-Channel MOSFET
Datasheet	HFH19N60 Datasheet

Full PDF Text Transcription for HFH19N60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFH19N60. For precise diagrams, and layout, please refer to the original PDF.

HFH19N60 OCT 2009 HFH19N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 18.5 A FEATURES Originative New Design Superior Avalanche Rugged Technology ...

View more extracted text

RES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 95 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3.

More Datasheets from SemiHow

Part Number	Description
HFH10N80	N-Channel MOSFET
HFH10N90Z	N-Channel MOSFET
HFH11N90	N-Channel MOSFET
HFH13N80	N-Channel MOSFET
HFH18N50S	N-Channel MOSFET
HFH6N90	N-Channel MOSFET
HFH7N80	N-Channel MOSFET
HFH9N90	N-Channel MOSFET