HFH6N90 - N-Channel MOSFET

Product Overview

SemiHow

Part number	HFH6N90
Manufacturer	SemiHow
File Size	904.63 KB
Description	N-Channel MOSFET
Datasheet	HFH6N90 Datasheet
Additional preview pages of the HFH6N90 datasheet.

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.95 Ω (Typ. ) @VGS=10V  100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

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Published: Jun 7, 2015 |