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HFH6N90 - N-Channel MOSFET

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.95 Ω (Typ. ) @VGS=10V  100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

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Datasheet Details

Part number HFH6N90
Manufacturer SemiHow
File Size 904.63 KB
Description N-Channel MOSFET
Datasheet download datasheet HFH6N90 Datasheet

Full PDF Text Transcription for HFH6N90 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFH6N90. For precise diagrams, and layout, please refer to the original PDF.

HFH6N90 Mar 2010 HFH6N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ = 1.95 Ω ID = 6.0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Ro...

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S  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.95 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3.

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