HFI10N60U - N-Channel MOSFET

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SemiHow

Part number	HFI10N60U
Manufacturer	SemiHow
File Size	302.79 KB
Description	N-Channel MOSFET
Datasheet	HFI10N60U Datasheet
Additional preview pages of the HFI10N60U datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested March 2013 BVDSS = 600 V RDS(on) typ ȍ ID = 9.5 A D2-PAK I2-PAK HFW10N60U HFI10N60U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter.

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Published: Apr 14, 2017 |