Full PDF Text Transcription for HFI10N60U (Reference)
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HFI10N60U. For precise diagrams, and layout, please refer to the original PDF.
HFW10N60U_HFI10N60U HFW10N60U / HFI10N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology ...
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Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested March 2013 BVDSS = 600 V RDS(on) typ ȍ ID = 9.5 A D2-PAK I2-PAK HFW10N60U HFI10N60U 1.Gate 2. Drain 3.
HFI10N60U Datasheet
