SemiHow HFN6N70U
N-Channel MOSFET
| Part No. | HFN6N70U |
|---|---|
| Datasheet | HFN6N70U Download |
| Manufacturer |  SemiHow |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.8 ȍ 7\S #9GS=10V 100% Avalanche Tested Dec 2012 BVDSS = 700 V RDS(on) typ = 1.8 ȍ ID = 6.0 A SOT-82 12 3 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 700 6.0 * 3.8 * 24.0* ρ30 170 6.0 4.0 4.5 PD TJ, TSTG TL Power Dissipation (TC = 25) - Derate above 25 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes,...
