Full PDF Text Transcription for HFP11N40 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HFP11N40. For precise diagrams, and layout, please refer to the original PDF.
HFP11N40 HFP11N40 400V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capac...
View more extracted text
d Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.38 Ω (Typ.) @VGS=10V Dec 2005 BVDSS = 400 V RDS(on) typ = 0.38 Ω ID = 11.4 A TO-220 1 2 3 1.Gate 2. Drain 3.
HFP11N40 Datasheet
