Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Built-in ESD Diode
Key Parameters
Parameter BVDSS ID
RDS(on), Typ Qg, Typ
Value 800 11 0.78 74
HFP11N80Z TO-220
HFS11N80Z TO-220F
Symbol
Unit V A ȍ nC
S D G
S D G
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
TO-220
TO-220F
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source.
Full PDF Text Transcription for HFP11N80Z (Reference)
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HFP11N80Z_HFS11N80Z Oct 2016 HFP11N80Z / HFS11N80Z 800V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrins...
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he Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Built-in ESD Diode Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 800 11 0.
HFP11N80Z Datasheet
