HFP11N80Z Datasheet PDF

FEATURES

‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ 100% Avalanche Tested ‰ RoHS Compliant ‰ Built-in ESD Diode

KEY PARAMETERS

Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 800 11 0.78 74 HFP11N80Z TO-220 HFS11N80Z TO-220F Symbol Unit V A ȍ nC S D G S D G

ABSOLUTE MAXIMUM RATINGS

TC=25୅ unless otherwise specified Symbol Parameter TO-220 TO-220F VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 800 11 11 * 6.9 6.9 * 44 44 * ρ30 970 11 21 4.0 PD Power Dissipation (TC = 25୅) - Derate above 25