HFP12N60S - N-Channel MOSFET

Product Overview

SemiHow

Part number	HFP12N60S
Manufacturer	SemiHow
File Size	256.92 KB
Description	N-Channel MOSFET
Datasheet	HFP12N60S Datasheet
Additional preview pages of the HFP12N60S datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.53 ȍ (Typ. ) @VGS=10V 100% Avalanche Tested TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

HFP13N10 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP13N50 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP15N06 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP17N10 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP4N65 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP50N06 - N-Channel MOSFET (Shantou Huashan)
HFP50N06V - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP5N80 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP60N06 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP630 - N-Channel Enhancement Mode Field Effect Transistor (Shantou Huashan)

Other Datasheets by SemiHow

Published: Jun 7, 2015 |