HFP18N50U - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.22 ȍ7S#9GS=10V 100% Avalanche Tested Apr 2014 BVDSS = 500 V RDS(on) typ = 0.22 ȍ ID = 18 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EA.

HFP18N50U n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFP18N50U
Manufacturer	SemiHow
File Size	272.36 KB
Description	N-Channel MOSFET
Datasheet	HFP18N50U Datasheet

Full PDF Text Transcription for HFP18N50U (Reference)

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HFP18N50U HFP18N50U 500V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Cap...

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ged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.22 ȍ 7S #9GS=10V 100% Avalanche Tested Apr 2014 BVDSS = 500 V RDS(on) typ = 0.22 ȍ ID = 18 A TO-220 1 23 1.Gate 2. Drain 3.

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