Datasheet Summary
Dec 2014
60V N-Channel MOSFET
BVDSS = 60 V RDS(on) typ Pȍ ID = 50 A
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
TO-220
1 2 3
1.Gate 2. Drain 3....
