HFP50N06GC - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current D.

HFP50N06GC n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFP50N06GC
Manufacturer	SemiHow
File Size	170.99 KB
Description	N-Channel MOSFET
Datasheet	HFP50N06GC Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HFP50N06	N-Channel MOSFET	Shantou Huashan
HFP50N06V	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC
HFP5N80	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC
HFP13N10	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC
HFP13N50	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC

Other Datasheets by SemiHow

Part Number	Description
HFP50N06	60V N-Channel MOSFET
HFP50N06A	60V N-Channel MOSFET
HFP5N40	400V N-Channel MOSFET
HFP5N50S	N-Channel MOSFET
HFP5N50U	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HFP50N06GC Dec 2014 HFP50N06GC 60V N-Channel MOSFET BVDSS = 60 V RDS(on) typ Pȍ ID = 50 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3.