HFP50N06GC - N-Channel MOSFET

Product Overview

SemiHow

Part number	HFP50N06GC
Manufacturer	SemiHow
File Size	170.99 KB
Description	N-Channel MOSFET
Datasheet	HFP50N06GC Datasheet
Additional preview pages of the HFP50N06GC datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current D.

📁 Similar Datasheet

HFP50N06V - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP5N80 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP13N10 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP13N50 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP15N06 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP17N10 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP4N65 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP60N06 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)

Other Datasheets by SemiHow

Published: Apr 18, 2016 |