HFP630 - 200V N-Channel MOSFET

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SemiHow

Part number	HFP630
Manufacturer	SemiHow
File Size	179.69 KB
Description	200V N-Channel MOSFET
Datasheet	HFP630 Datasheet
Additional preview pages of the HFP630 datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.34 ȍ (Typ. ) @VGS=10V 100% Avalanche Tested TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

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Published: Jun 7, 2015 |