HFP630 Description
HFP630 July 2005 HFP630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.34 ȍ ID = 9.
| Manufacturer | Part Number | Description |
|---|---|---|
Shantou Huashan |
HFP630 | N-Channel Enhancement Mode Field Effect Transistor |
HFP630 July 2005 HFP630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.34 ȍ ID = 9.