Datasheet4U Logo Datasheet4U.com

HFP730U - N-Channel MOSFET

Key Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 13 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.75 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested Oct 2013 BVDSS = 400 V RDS(on) typ = 0.75 ȍ ID = 6.0 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS E.

📥 Download Datasheet

Datasheet Details

Part number HFP730U
Manufacturer SemiHow
File Size 203.56 KB
Description N-Channel MOSFET
Datasheet download datasheet HFP730U Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HFP730U HFP730U 400V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 13 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.75 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested Oct 2013 BVDSS = 400 V RDS(on) typ = 0.75 ȍ ID = 6.0 A TO-220 1 23 1.Gate 2. Drain 3.