The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
HFS12N65U
HFS12N65U
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.67 ȍ7S#9GS=10V 100% Avalanche Tested
July 2014
BVDSS = 650 V RDS(on) typ = 0.67 ȍ ID = 12 A
TO-220F
12 3
1.Gate 2. Drain 3.