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HFS2N60FS
July 2015
HFS2N60FS
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 2 A
FEATURES
TO-220F
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : ȍ(Typ.) @VGS=10V 100% Avalanche Tested Single Gauge Package
12 3
1.Gate 2. Drain 3.