HFS5N50S Datasheet | SemiHow

OCT 2008 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 1.2 Ω ID = 5.0 A Features  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 15.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.2 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3....