Datasheet4U Logo Datasheet4U.com

HFS5N60F - N-Channel MOSFET

Key Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 12.5 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 1.8 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested BVDSS = 600 V RDS(on) typ ȍ ID = 5 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR.

📥 Download Datasheet

Datasheet Details

Part number HFS5N60F
Manufacturer SemiHow
File Size 204.60 KB
Description N-Channel MOSFET
Datasheet download datasheet HFS5N60F Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HFS5N60F Nov 2015 HFS5N60F 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 12.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 1.8 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested BVDSS = 600 V RDS(on) typ ȍ ID = 5 A TO-220F 12 3 1.Gate 2. Drain 3.