HFS75N75 Datasheet | SemiHow

Dec 2008 75V N-Channel MOSFET BVDSS = 75 V RDS(on) typ=10.5 mΩ ID = 80 A Features  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 77 n C (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.0105 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3. Source...