HFS8N60S - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

HFS8N60S n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFS8N60S
Manufacturer	SemiHow
File Size	182.18 KB
Description	N-Channel MOSFET
Datasheet	HFS8N60S Datasheet

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HFS8N60S Dec 2006 HFS8N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 7.5 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3.