HFS8N65S - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 1.16 ȍ (Typ. ) @VGS=10V 100% Avalanche Tested TO-220F 123 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

HFS8N65S n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFS8N65S
Manufacturer	SemiHow
File Size	251.84 KB
Description	N-Channel MOSFET
Datasheet	HFS8N65S Datasheet

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HFS8N65S Sep 2009 HFS8N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 1.16 ȍ ID = 7.2 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.16 ȍ (Typ.) @VGS=10V 100% Avalanche Tested TO-220F 123 1.Gate 2. Drain 3.