HFT1N60S - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested SOT-223 2 3 1 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain C.

HFT1N60S n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFT1N60S
Manufacturer	SemiHow
File Size	305.01 KB
Description	N-Channel MOSFET
Datasheet	HFT1N60S Datasheet

Full PDF Text Transcription for HFT1N60S (Reference)

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HFT1N60S Dec 2009 HFT1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.2 A FEATURES Originative New Design Superior Avalanche Rugged Technology Ro...

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S Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested SOT-223 2 3 1 1.Gate 2. Drain 3.

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