HFU5N50U Datasheet PDF

FEATURES

‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 13 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested May 2014 BVDSS = 500 V RDS(on) typ ȍ ID = 4.0 A D-PAK I-PAK 2 1 3 HFD5N50U 1 2 3 HFU5N50U 1.Gate 2. Drain 3. Source

ABSOLUTE MAXIMUM RATINGS

TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 500 4.0 2.5 16 ρ30 230 4.0 6.3 4.5 PD TJ, TSTG T