Datasheet4U Logo Datasheet4U.com

HFU5N70S - N-Channel MOSFET

Datasheet Summary

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 10.5 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD5N70S 1 2 3 HFU5N70S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Dr.

📥 Download Datasheet

Datasheet preview – HFU5N70S

Datasheet Details

Part number HFU5N70S
Manufacturer SemiHow
File Size 173.24 KB
Description N-Channel MOSFET
Datasheet download datasheet HFU5N70S Datasheet
Additional preview pages of the HFU5N70S datasheet.

📁 Similar Datasheet

  • HFU70N03V - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
Other Datasheets by SemiHow

Full PDF Text Transcription

Click to expand full text
HFD5N70S_HFU5N70S Jan 2013 HFD5N70S / HFU5N70S 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ ȍ ID = 3.8 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 10.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD5N70S 1 2 3 HFU5N70S 1.Gate 2. Drain 3.
Published: |