Datasheet4U Logo Datasheet4U.com

HFU630A - 200V N-Channel MOSFET

Datasheet Summary

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 12 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD630A 1 2 3 HFU630A 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-So.

📥 Download Datasheet

Datasheet preview – HFU630A

Datasheet Details

Part number HFU630A
Manufacturer SemiHow
File Size 405.76 KB
Description 200V N-Channel MOSFET
Datasheet download datasheet HFU630A Datasheet
Additional preview pages of the HFU630A datasheet.

📁 Similar Datasheet

  • HFU70N03V - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
Other Datasheets by SemiHow

Full PDF Text Transcription

Click to expand full text
HFD630A_HFU630A August 2015 HFD630A / HFU630A 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 9.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 12 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD630A 1 2 3 HFU630A 1.Gate 2. Drain 3.
Published: |