Full PDF Text Transcription for HFU6N65U (Reference)
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HFU6N65U. For precise diagrams, and layout, please refer to the original PDF.
HFD6N65U_HFU6N65U HFD6N65U / HFU6N65U 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very...
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rior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested May 2014 BVDSS = 650 V RDS(on) typ ȍ ID = 4.8 A D-PAK I-PAK 2 1 3 HFD6N65U 1 2 3 HFU6N65U 1.Gate 2. Drain 3.
HFU6N65U Datasheet
