HFU6N65U - N-Channel MOSFET

Product Overview

SemiHow

Part number	HFU6N65U
Manufacturer	SemiHow
File Size	321.60 KB
Description	N-Channel MOSFET
Datasheet	HFU6N65U Datasheet
Additional preview pages of the HFU6N65U datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested May 2014 BVDSS = 650 V RDS(on) typ ȍ ID = 4.8 A D-PAK I-PAK 2 1 3 HFD6N65U 1 2 3 HFU6N65U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol.

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Published: Apr 14, 2017 |