HFW10N65S - N-Channel MOSFET

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SemiHow

Part number	HFW10N65S
Manufacturer	SemiHow
File Size	214.01 KB
Description	N-Channel MOSFET
Datasheet	HFW10N65S Datasheet
Additional preview pages of the HFW10N65S datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested D2-PAK D G S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

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Published: Apr 14, 2017 |