HFW12N60S - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.53 ȍ7S#9GS=10V 100% Avalanche Tested D2-PAK 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain.

HFW12N60S n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFW12N60S
Manufacturer	SemiHow
File Size	207.35 KB
Description	N-Channel MOSFET
Datasheet	HFW12N60S Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HFW1230K00	Relay	CII Technology

Other Datasheets by SemiHow

Part Number	Description
HFW12N65S	N-Channel MOSFET
HFW10N60	N-Channel MOSFET
HFW10N60S	N-Channel MOSFET
HFW10N60U	N-Channel MOSFET
HFW10N65S	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HFW12N60S Jan 2013 HFW12N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.53 ȍ ID = 12 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.53 ȍ7S#9GS=10V 100% Avalanche Tested D2-PAK 1.Gate 2. Drain 3.