Full PDF Text Transcription for HFW6N90 (Reference)
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HFW6N90. For precise diagrams, and layout, please refer to the original PDF.
HFW6N90_HFI6N90 March 2013 HFW6N90 / HFI6N90 900V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology...
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Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.95 ȍ 7S #9GS=10V 100% Avalanche Tested BVDSS = 900 V RDS(on) typ = 1.95 ȍ ID = 6.0 A D2-PAK I2-PAK HFW6N90 HFI6N90 1.Gate 2. Drain 3.
HFW6N90 Datasheet
