SemiHow HGA40N120FV
N-Channel MOSFET
| Part No. | HGA40N120FV |
|---|---|
| Datasheet | HGA40N120FV Download |
| Manufacturer |  SemiHow |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● 1200V Field Stop Trench Technology● Low Saturation Voltage
● High Switching Frequency
● Very Soft, Fast Recovery Anti-parallel diode APPLICATION
● Welding Converters
● Uninterruptible Power Supply
● General Purpose Inverters March 2015 VCES = 1200 V IC = 40 A VCE(sat) typ = 2.0 V TO-247 GC E
ABSOLUTE MAXIMUM RATINGS
Symbol VCES IC ICM IF IFM VGES PD TJ, TSTG TL Parameter Collector-Emitter Voltage Collector Current Collector Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) Collector Current – Pulsed (Note 1) Diode Forward Current – Continuous (TC = 100℃) Diode Maximum Forward Current Gate-Emitter Voltage Power Dissipation Power Dissipation – Continuous (TC = 25℃) – Continuous (TC = 100℃) Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Notes: 1. Pulse width limited by max junction temperature Thermal Resistance Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Junction-to-Case Junction-to-Case Junction-to-Ambient Value 1200 64 40 160 20 60 ±20 400 160 -55 to +150 300 Typ. ---- Max.
