SemiHow HRLP370N10K
N-Channel MOSFET
| Part No. | HRLP370N10K |
|---|---|
| Datasheet | HRLP370N10K Download |
| Manufacturer |  SemiHow |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Originative New Design● Superior Avalanche Rugged Technology
● Excellent Switching Characteristics
● Unrivalled Gate Charge : 53 nC (Typ.)
● Extended Safe Operating Area
● Lower RDS(ON) : 30 mΩ (Typ.) @VGS=10V
● Lower RDS(ON) : 33 mΩ (Typ.) @VGS=4.5V
● 100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ = 30 mΩ ID = 25 A TO-220 1 2 3 1.Gate 2. Drain 3. Source
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25℃) - Derate above 25℃ 100 25 17.5 88 ±20 80 6 60 0.4 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +175 300 Units V A A A V mJ mJ W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max.
