HRO400N10K - N-Channel Trench MOSFET

Features

High Dense Cell Design Reliable and Rugged Advanced Trench Process Technology Key Parameters Parameter BVDSS ID RDS(on), typ Value 100 6.3 33 Unit V A Pȍ.

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Datasheet Details

Part number	HRO400N10K
Manufacturer	SemiHow
File Size	228.56 KB
Description	N-Channel Trench MOSFET
Datasheet	HRO400N10K Datasheet
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HRO400N10K Jan 2016 HRO400N10K 100V N-Channel Trench MOSFET Features High Dense Cell Design Reliable and Rugged Advanced Trench Process Technology Key Parameters Parameter BVDSS ID RDS(on), typ Value 100 6.3 33 Unit V A Pȍ Application Power Management in Inverter System Synchronous Rectification Package & Internal Circuit SOP-8 Absolute Maximum Ratings TA=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TA = 25୅ TA = 70୅ (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation TA = 25୅ TA = 70୅ Operating and Storage Temperature Range 100 ρ20 6.3 5.0 25 60 3.1 2.

Published: Jul 18, 2016 |