HRP130N06K - N-Channel Trench MOSFET

SemiHow

Datasheet Details

HRP130N06K HRP130N06K 60V N-Channel Trench MOSFET.

 Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 42 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 10.5 mΩ (Typ. ) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ =10.5mΩ ID = 70 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current.