SemiHow HRP50N06K
N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 11.5 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested July 2014 BVDSS = 60 V RDS(on) typ = Pȍ ID = 40 A TO-220 1 23 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25) - Derate above 25 60 40 28 140 ρ20 120 7.8 78 0.52 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +175 30