HRP75N75V Datasheet PDF

FEATURES

‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 80 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 6.0 Pȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested Fab 2014 BVDSS = 70 V RDS(on) typ = 6 Pȍ ID = 48 A TO-220 1 2 3 1.Gate 2. Drain 3. Source

ABSOLUTE MAXIMUM RATINGS

TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt 70 48 30 192 ρ25 810 48 4.8 15 PD Power Dissipation (TC = 25୅) - Derate above 25୅ 125 1.0 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature