HRP85N06K - N-Channel MOSFET

Features

Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 73 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 7 Pȍ (Typ. ) @VGS=10V 100% Avalanche Tested November 2014 BVDSS = 60 V RDS(on) typ = 7 Pȍ ID = 80 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drai.

SemiHow

Datasheet Details

Part number	HRP85N06K
Manufacturer	SemiHow
File Size	212.18 KB
Description	N-Channel MOSFET
Datasheet	HRP85N06K Datasheet
Additional preview pages of the HRP85N06K datasheet.

📁 Similar Datasheet

HRP01 - Relative Pressure Sensor (HOPERF)
HRP160306-CSC3 - SMD Type Red Emitter (CT Micro)
HRP22 - Silicon Schottky Barrier Diode for Rectifying (Hitachi Semiconductor)
HRP2540 - Power Rectifier/Power Surge Suppressor (Intersil Corporation)
HRP32 - Silicon Schottky Barrier Diode for Rectifying (Hitachi Semiconductor)
HRP5 - LSI Assembly (Rohm)
HRP5022X - Shielded Power Inductors (BOURNS)
HRP5022X-2R2M - Shielded Power Inductors (BOURNS)

Other Datasheets by SemiHow

HRP85N08K - N-Channel MOSFET
HRP80N06K - 60V N-Channel Trench MOSFET
HRP80N08K - N-Channel MOSFET
HRP82N10K - N-Channel MOSFET
HRP88N08K - N-Channel MOSFET
HRP100N08K - N-Channel Trench MOSFET
HRP105N15H - N-Channel Trench MOSFET
HRP120N10K - 100V N-Channel Trench MOSFET

Full PDF Text Transcription

Click to expand full text

HRP85N06K HRP85N06K 60V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 73 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 7 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested November 2014 BVDSS = 60 V RDS(on) typ = 7 Pȍ ID = 80 A TO-220 1 23 1.Gate 2. Drain 3.

Published: Apr 14, 2017 |