SemiHow HRS120N10K
N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 10 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested July 2014 BVDSS = 100 V RDS(on) typ = 10 Pȍ ID = 73 A TO-220F 12 3 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25) - Derate above 25 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 100 73 * 51 * 200 * ρ25 240 5.0 50 0.33 -55 to