HRS120N10K - N-Channel MOSFET

Datasheet Summary

Features

Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 65 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 10 Pȍ (Typ. ) @VGS=10V 100% Avalanche Tested July 2014 BVDSS = 100 V RDS(on) typ = 10 Pȍ ID = 73 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain.

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Datasheet Details

Part number	HRS120N10K
Manufacturer	SemiHow
File Size	193.64 KB
Description	N-Channel MOSFET
Datasheet	HRS120N10K Datasheet
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Full PDF Text Transcription

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HRS120N10K HRS120N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 10 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested July 2014 BVDSS = 100 V RDS(on) typ = 10 Pȍ ID = 73 A TO-220F 12 3 1.Gate 2. Drain 3.

Published: Apr 13, 2017 |