HRW370N10K - N-Channel Trench MOSFET

Features

Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 50 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 30 Pȍ (Typ. ) @VGS=10V 100% Avalanche Tested April 2016 BVDSS = 100 V RDS(on) typ = 30 Pȍ ID = 25 A D2-PAK 2 1 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current.

SemiHow

Datasheet Details

Part number	HRW370N10K
Manufacturer	SemiHow
File Size	254.07 KB
Description	N-Channel Trench MOSFET
Datasheet	HRW370N10K Datasheet
Additional preview pages of the HRW370N10K datasheet.

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Full PDF Text Transcription

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HRW370N10K HRW370N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 50 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 30 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested April 2016 BVDSS = 100 V RDS(on) typ = 30 Pȍ ID = 25 A D2-PAK 2 1 3 1.Gate 2. Drain 3.

Published: Jul 18, 2016 |