SemiHow KSC13003H
NPN Silicon Power Transistor
GENERAL DESCRIPTION
● High voltage, High speed power switching● Suitable for Electronic Ballast up to 21W
FEATURES
● VCBO = 900V● VCEO = 530V
● VBEO = 9V
● IC = 1.5A TO-92 TO-126 TO-251 3 2 1 3 2 1 3 2 1 Ordering Information Ordering number KSB13003H KSB13003HR KSC13003H KSU13003H Package TO-92 TO-92 TO-126 TO-251 Pin Assignment 123 BCE ECB BCE BCE Packing Ammo Ammo Bulk Tube క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ΔΥ͑ͣͦ͑͢͡ KSX13003H Series KSB13003H KSC13003H / KSU13003H NPN Silicon Power Transistor, VCBO= 900V, VCEO= 530V, IC= 1.5A
ABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise noted CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC ICP IB PC TJ TSTG TO-92 1.1 RATING TO-126 900 530 9 1.5 3 0.75 20 150 -65~150 TO-251 25 UNIT V V V A A A W ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise noted CHARACTERISTIC...