KSH13009AL
KSH13009AL is Switch Mode series NPN silicon Power Transistor manufactured by SemiHow.
KSH130 009AL
◎ SEMIHOW REV.A1,Oct 2007
.Data Sheet.in
KSH130 009AL
Switch Mode series NPN silicon Power Transistor
- High voltage, high speed power switching
- Suitable for switching regulator, inverters motor controls
12 Amperes NPN Silicon Power Transistor 100 Watts
Absolute Maximum Ratings
CHARACTERISTICS Collector-Base Voltage Collector-Emitter Collector Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature
TC=25℃ unless otherwise noted SYMBOL VCBO VCEO VEBO IC ICP IB PC TJ TSTG RATING 700 400 9 12 24 6 130 150 -65~150 UNIT V V V A A A W ℃ ℃
TO-3P 1. Base 2. Collector 3. Emitter
12 3
Electrical Characteristics
CHARACTERISTICS Collector-Emitter Sustaining Voltage Emitter Cut-off Current
- DC Current Gain
TC=25℃ unless otherwise noted SYMBOL VCEO(sus) IEBO h FE1 h FE2 VCE(sat) Test Condition IC=10m A, IB=0 VEB=9V,IC=0 VCE=5V,IC=5A VCE=5V,I , C=8A IC=5A,IB=1A IC=8A,IB=1.6A IC=12A,IB=3A IC=5A,IB=1A IC=8A,IB=1.6A VCB=10V, f=0.1MHz VCE=10V,IC=0.5A Vcc=125V, Ic=8A IB1=1.6A, IB2= -1.6A RL=15.6Ω 4 1.1 3 0.7 180 8 6 Min 400 1 40 30 1 1.5 3 1.2 1.6 V V V V V ㎊ ㎒ ㎲ ㎲ ㎲ Typ. Max Unit V ㎃
- Collector-Emitter Saturation Voltage
- Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn on Time Storage Time Fall Time
VBE(sat) Cob f T ton tstg t F
Note.
- Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Package Mark information.
8 ~ 17 15 ~ 28 26 ~ 39
R h FE1 Classification Y O
YWW Z KSH13009AL
S YWW Z
Semi How Symbol
Y; year code, WW; week code h FE1 Classification
Y1(26~33), Y2(31~39)
◎ SEMIHOW REV.A1,Oct 2007
.Data Sheet.in
KSH130 009AL
Typical Characteristics
◎ SEMIHOW REV.A1,Oct 2007
.Data Sheet.in
KSH130 009AL
Typical Characteristics ( Continued )
◎ SEMIHOW REV.A1,Oct...