SemiHow KSH1408F
Switch Mode series NPN Epitaxial silicon Power Transistor
| Part No. | KSH1408F |
|---|---|
| Datasheet | KSH1408F Download |
| Manufacturer |  SemiHow |
| Description | Switch Mode series NPN Epitaxial silicon Power Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Max. Operating Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP IB PC TJ TSTG 80 80 5 4 8 0.4 25 150 -65~150 UNIT V V V A A A W ℃ ℃ 4 Amperes NPN Silicon Power Transistor 25 Watts TO-220F 1. Base 2. Collector 3. Emitter 12 3ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise noted CHARACTERISTICS SYMBOL Test Condition Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current *DC Current Gain VCEO ICBO IEBO hFE1 hFE2 IC=50mA, IB=0 VCB=80V,IE=0 VEB=5V,IC=0 VCE=5V,IC=0.5A VCE=5V,IC=3A *Collector-Emitter Saturation Voltage VCE(sat) IC=3A,IB=0.3A *Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% VBE(sat) Cob fT IC=3A,IB=0.3A VCB=10V, f=1MHz VCE=5V, IC=0.5A Min Typ.
