SemiMOS SM10N60C
600V N-Channel MOSFET
| Part No. | SM10N60C |
|---|---|
| Datasheet | SM10N60C Download |
| Manufacturer | SemiMOS |
| Description | 600V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
: □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 44nC (Typ.) □ BVDSS=600V,ID=10A □ RDS(on) :0.75 Ω (Max) @VG=10V □ 100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S)ABSOLUTE MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Voltage Tj=25℃ Tj=100℃ Single Pulse Avalanche Energy (note1) Avalanche Current (note2) Power Dissipation (Tj=25℃) Junction Temperature(Max) Storage Temperature Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds Value 600 10 6.6 ±30 520 10 50 150 -55~+150 300 Unit V A V mJ A W ℃ ℃ ℃ Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJC Thermal Resistance,Junction to Case - 2.50 ℃/W RθJA Thermal Resistance,Junction to Ambient - 62.5 ℃/W 1 SM10N60C 600V N-Channel MOSFETELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise noted) Symbol Parameter Test Condition Min.
