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SM15N10
100V N-Channel MOSFET
TO-220F
SM15N10 100V N-Channel
MOSFET
Features:
□ Low Intrinsic Capacitances. □ Excellent Switching Characteristics.
N □ Extended Safe Operating Area.
□ Unrivalled Gate Charge :Qg= 12.5nC (Typ.). □ BVDSS=100V,ID= 15A □ RDS(on) : 0.14Ω (Max) @VG=10V □ 100% Avalanche Tested
O Absolute Maximum Ratings* (Tc=25℃ Unless otherwise noted)
S Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous
G Drain Current-Continuous(TC=100℃)
Pulsed Drain Current Maximum Power Dissipation Derating factor
N Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID
ID (100℃)
IDM PD
EAS
TJ,TSTG
1.Gate (G) 2.Drain (D) 3.Source (S)
Limit
100 ±20 15 6.5 58 30 0.
SM15N10 Datasheet
