SemiMOS SM15N10
100V N-Channel MOSFET
| Part No. | SM15N10 |
|---|---|
| Datasheet | SM15N10 Download |
| Manufacturer | SemiMOS |
| Description | 100V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. N □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg= 12.5nC (Typ.). □ BVDSS=100V,ID= 15A □ RDS(on) : 0.14Ω (Max) @VG=10V □ 100% Avalanche Tested OABSOLUTE MAXIMUM RATINGS
* (Tc=25℃ Unless otherwise noted) S Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous G Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor N Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID (100℃) IDM PD EAS TJ,TSTG 1.Gate (G) 2.Drain (D) 3.Source (S) Limit 100 ±20 15 6.5 58 30 0.24 150 -55 To 150 Unit V V A A A W W/℃ mJ ℃ O Thermal Characteristics KThermal Resistance,Junction-to-Case(Note 2) RθJC 4.17 ℃/W 1 SM15N10 100V N-Channel MOSFETELECTRICAL CHARACTERISTICS
(TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V...
